Compound Semiconductors

Thinning of Gallium Oxide Wafers
The properties of different polymorph gallium oxide vary greatly.By adopting ultra-fine diamond abrasives and optimized vitrified bond, rough grinding and finish grinding of various gallium oxide substrates can be realized. It features stable grinding performance and low wear, providing technical support for the production of new wide-bandgap semiconductor devices.
Thinning of Gallium Oxide Wafers

Application Scenarios


The properties of different polymorph gallium oxide vary greatly.By adopting ultra-fine diamond abrasives and optimized vitrified bond, rough grinding and finish grinding of various gallium oxide substrates can be realized. It features stable grinding performance and low wear, providing technical support for the production of new wide-bandgap semiconductor devices.


  • 1.High self-sharpening, clogging resistance - ensures stable grinding

  • 2.Excellent sharpness, guaranteeing low-stress, low-damage processing. 

  • 3.High heat generation during grinding - superior wheel heat dissipation avoids thermal cracks

  • 4.High end-face accuracy, ensuring uniform thinning and low TTV


Model Specifications



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6A2T


Model

DTHXWBondGrit Size

6A2T

209

254

30

95

155

158

5

7

2

3

4.5

4

B

V

2000

8000


Workpiece

Ga₂O₃ Wafer

Workpiece Size

2-Inch (Bonded on 4-Inch wafer)

Wheel Specifications

6A2T D313 (12 In) V 2000

G-Ratio(Wheel wear :

 Workoiece removal)

1:8

TTV

≤2μm