Compound Semiconductors

Thinning of Gallium Nitride Wafers
Manufactured with a vitrified bond that is heat-resistant,wear-resistant, and offers excellent heat dissipation-preventing micro-cracks and thermal damage, TTV less than or equal to 3 μm,damaged layer depth less than 2.7 μm and exceptional efficiency can be achieved.. The product brings positive effect, namely foreign monopoly can be broken and customers costs reduce.
Thinning of Gallium Nitride Wafers

Application Scenarios


Manufactured with a vitrified bond that is heat-resistant,wear-resistant, and offers excellent heat dissipation-preventing micro-cracks and thermal damage, TTV less than or equal to 3 μm,damaged layer depth less than 2.7 μm and exceptional efficiency can be achieved.. The product brings positive effect, namely foreign monopoly can be broken and customers costs reduce.


  • 1.Extremely high hardness, usinghigh-sharpness0diamond for high grinding efficiency

  • 2.Designed for very brittle materials - high wheel sharpness reduces surface damage and stress

  • 3.Superior heat dissipation, avoiding thermal damage

  • 4.Stable self-sharpening - no passivation, no wheelclogging, consistent processing quality


Model Specifications



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6A2T


Model

DTHXWBondGrit Size
6A2T

209

254

313

30

95

155

158

237

5

7

2

3

4.5

4

B

325

2000


Workpiece

GaN Wafer

Workpiece Size

4-Inch

Wheel Specification

6A2T D209 (8 In) V 2000

G-Ratio(Wheel wear : 

Workoiece removal)

1:3

TTV

≤3μm