Compound Semiconductors

Thinning of Gallium Arsenide Wafers
Resin bond is chosen, with gentle grinding force and a roughness of Ra≤10nm. Customized specifications are avail-able, suitable for small-batch high-precision processing,and compatible with precision thinning equipment. The precision and efficiency reach leading level of the industry.
Thinning of Gallium Arsenide Wafers

Application Scenarios


Resin bond is chosen, with gentle grinding force and a roughness of Ra≤10nm. Customized specifications are avail-able, suitable for small-batch high-precision processing,and compatible with precision thinning equipment. The precision and efficiency reach leading level of the industry.


  • 1.Good toughness and excellent surface quality

  • 2.High sharpness, low stress, and low subsurface damage

  • 3.Excellent self-sharpening, easy chip evacuation - no chip adhesion or wheel clogging


Model Specifications



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6A2T


Model

DTHXWBondGrit Size

6A2T

209

254

313

30

95

155

158

237

5

7

2

3

4.5

4

B

600

2000


Workpiece

GaAs Wafer

Workpiece Size

6 Inch

Wheel Specification

6A2T D209 (8 In) B 6006A2T D209 (8 In) B 2000

Surface Quality

Uniform grinding marks

High gloss, uniform marks no deep scratches

Roughness

-≤10nm

TTV

≤3μm≤3μm