Silicon Carbide (SiC)

Process Compatibility
Special vitrified bond is utilized to remove surface damage layers with excellent heat dissipation, microcracks preventing. Infeed rate: 0.8 μm/s. Efficiency improvement: >30% (compared to other products)
Process Compatibility

Application Scenarios


Special vitrified bond is utilized to remove surface damage layers with excellent heat dissipation, microcracks preventing. Infeed rate: 0.8 μm/s. Efficiency improvement: >30% (compared to other products)


Model Specifications



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6A2T


Model

D

T

H

X

W

Bond

Grit Size

6A2T

209

254

313

30

95

155

158

237

5

7

2

3

4.5

4

ML

V

2000

8000

30000


Workpiece

Wafer Rough

Grinding

Wafer Fine

Grinding

Wafer Rough

Grinding

Wafer Fine

Grinding

Workpiece Size

6 Inch

8 Inch

Wheel Specification

6A2T D209 (8 Inch) 

V 800

6A2T D209 (8 Inch) 

V 8000

6A2T D209 (8 Inch) 

V 800

6A2T D209 (8 Inch) 

V 8000

G-Ratio(Wheel wear:

Workpece removal)

1:7

1:2

1:5

1:1.5

Roughness

-

2nm

-

2nm

TTV

-

< 2μm

-

< 3μm