Silicon Carbide (SiC)

Thinning of Silicon Carbide Substrate
Suitable for full processes including rough and finishgrinding. Grit sizes cover 2000#, 8000#, 30000#,Rough grinding: Ra<15nm,Finish grinding: Ra<2nm (ready for final polishing directly),Cost reduction: 40%,Compatible with mainstream thinning machines.
Thinning of Silicon Carbide Substrate

Application Scenarios


Suitable for full processes including rough and finishgrinding. Grit sizes cover 2000#, 8000#, 30000#

Rough grinding: Ra<15nm

Finish grinding: Ra<2nm (ready for final polishing directly)

Cost reduction: 40%

Compatible with mainstream thinning machines


Model Specifications



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6A2T


Model

D

T

H

X

W

Bond

Grain Size

6A2T

209

254

313

30

95

155

158

237

57

2

3

4.5

4

ML

V

2000

8000

30000



Workpiece

Wafer Rough

Grinding

Wafer Fine

Grinding

Wafer Rough

Grinding

Wafer Fine

Grinding

Workpiece Size

6-Inch8-Inch

Wheel Specification

D313 (12 Inch) 

V 2000

D313 (12 Inch

V 30000

D313 (12 Inch

V 2000

D313 (12 Inch

V 30000

G-Ratio(Wheel wear : 

Workoiece removal)

1:61:1.81:4


1:1.4

Roughness

-

center 1nm

edge 2nm


-

center 1nm

edge 2nm

TTV

-< 3μm-< 4μm